EPC Space launches radiation-hard eGaN FETs for space computing

EPC Space announced three new radiation-hardened eGaN power transistors for next-generation space computing systems on August 18, 2026. The devices target compact, high-efficiency power conversion for processors and accelerators in space, where radiation tolerance and power density are critical.

Why it matters: - Space systems are adding more demanding processors and accelerators, which raises the bar for power conversion. - EPC Space’s new GaN transistors are built to deliver high efficiency, high power density and radiation robustness in space-constrained designs. - The parts are aimed at keeping compute platforms reliable in environments where single-event effects, neutron exposure and total ionizing dose can threaten electronics.

What happened: - EPC Space announced three new eGaN power transistors on August 18, 2026. - The devices are the EPC7050PCSH, EPC7066PCSH and EPC7065PCSH. - EPC Space designed the parts for next-generation space computing systems. - The transistors come in plastic surface-mount PQFN packages with backside thermal pads.

The details: - The EPC7050PCSH is a 15V device with 101A continuous current capability and a typical RDS(on) of 0.28 mΩ. - The EPC7066PCSH is rated at 25V and 101A, with a typical RDS(on) of 0.37 mΩ. - The EPC7065PCSH is rated at 40V, with 101A continuous current capability and a typical RDS(on) of 0.5 mΩ. - All three devices combine ultra-low on-resistance, high current capability and fast switching performance. - The transistors offer zero reverse-recovery charge. - EPC Space says the parts have exceptional radiation immunity, including TID greater than 1 Mrad, SEE LET(Si) of 85 MeV cm2/mg and neutron tolerance above 4E15 n/cm2. - The devices are designed for synchronous rectifier use on the secondary side of intermediate bus converters with 5V to 12V output. - The parts also target point-of-load buck converters and IVRs supplying 0.8V core voltage for processors. - EPC Space said engineering models for 500-unit quantities are priced at $85. - EPC Space said rad-hard, space-qualified versions are priced at $125.

Between the lines: - The product launch reflects a broader push to move AI and high-performance computing deeper into space platforms. - Power design is becoming a system-level constraint as space compute hardware grows more capable and more energy-hungry. - Bel Lazar, CEO of EPC Space, said the devices are aimed at VRM, IVR, POL and IBC applications for space compute assets such as Versal SoCs and NVIDIA GPUs. - Lazar also said the parts combine radiation hardness with electrical performance that exceeds the best silicon MOSFETs used on the ground.

What's next: - EPC Space is positioning the new transistors for adoption in future space compute power architectures. - The company expects the devices to support higher-frequency and higher-efficiency operation in compact power stages. - Wider use will likely depend on how quickly satellite and spacecraft designers adopt GPU and SoC-based compute platforms.

The bottom line: - EPC Space is betting that radiation-hard GaN can help space electronics keep up with the power demands of modern computing without giving up reliability.